Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools
نویسندگان
چکیده
منابع مشابه
Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools
Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation progra...
متن کاملModeling and Simulation of a Molecular Single-Electron Transistor
In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...
متن کاملTCAD oriented simulation of single-electron transistors at device level
In this paper we present a simulation approach for electron transport in singleelectron devices based on a weak-coupling formulation for the linear-response transconductance of a quantum dot/reservoir system. A simulation tool devised for the simulation of single-electron transistors has been developed. It provides the equilibrium solution of the nonlinear Poisson equation for the classical cha...
متن کاملFuture Aspects of Process and Device Simulation 1 TCAD
Process and device simulation is commonly used for the design of new VLSI devices and processes and as an explorative tool to gain a better understanding of device and process physics. On the other hand, simulation is also carried out after the design phase to optimize certain parameters of a technology, e.g., to improve device reliability or to increase the yield. For these tasks the term "Tec...
متن کاملSingle-Electron Device Simulation
A three-dimensional (3-D) simulator is presented which uses a linear-response approach to simulate the conductance of semiconductor single-electron transistors at the solid-state level. The many-particle groundstate of the quantum dot, weakly connected to the drain and the source reservoir, is evaluated in a self-consistent manner including quantum-mechanical many-body interactions. A transfer-...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: American Journal of Applied Sciences
سال: 2006
ISSN: 1546-9239
DOI: 10.3844/ajassp.2006.1933.1938